Parameters | |
---|---|
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 83A |
Current - Collector Cutoff (Max) | 1mA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.85V |
Turn On Time | 185 ns |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 50A |
Turn Off Time-Nom (toff) | 490 ns |
IGBT Type | Trench Field Stop |
NTC Thermistor | Yes |
Input Capacitance (Cies) @ Vce | 2.8nF @ 25V |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Screw |
Mounting Type | Chassis Mount |
Package / Case | Module |
Number of Pins | 18 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~125°C |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 15 |
ECCN Code | EAR99 |
Max Power Dissipation | 335W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 33 |
JESD-30 Code | R-XUFM-X15 |
Qualification Status | Not Qualified |
Number of Elements | 6 |
Configuration | Full Bridge Inverter |
Power Dissipation | 335W |
Case Connection | ISOLATED |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |