FST83100M
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | D61-3M |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 2012 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Terminal Position | SINGLE |
| Terminal Form | THROUGH-HOLE |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 2 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 1.5mA @ 20V |
| Voltage - Forward (Vf) (Max) @ If | 840mV @ 80A |
| Forward Current | 80A |
| Max Reverse Leakage Current | 1μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 800A |
| Output Current-Max | 40A |
| Application | POWER |
| Current - Average Rectified (Io) | 80A DC |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 80A |
| Number of Phases | 1 |
| Peak Reverse Current | 1A |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Diode Configuration | 1 Pair Common Cathode |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
