Parameters | |
---|---|
HTS Code | 8541.10.00.80 |
Terminal Position | SINGLE |
Terminal Form | THROUGH-HOLE |
JESD-30 Code | R-PSIP-T3 |
Number of Elements | 2 |
Element Configuration | Common Cathode |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 1.5mA @ 20V |
Voltage - Forward (Vf) (Max) @ If | 650mV @ 80A |
Forward Current | 80A |
Max Reverse Leakage Current | 1μA |
Operating Temperature - Junction | -55°C~150°C |
Max Surge Current | 800A |
Output Current-Max | 40A |
Application | POWER |
Current - Average Rectified (Io) | 80A DC |
Forward Voltage | 750mV |
Max Reverse Voltage (DC) | 30V |
Average Rectified Current | 80A |
Number of Phases | 1 |
Peak Reverse Current | 1μA |
Max Repetitive Reverse Voltage (Vrrm) | 30V |
Diode Configuration | 1 Pair Common Cathode |
Max Forward Surge Current (Ifsm) | 800A |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | D61-3SM |
Diode Element Material | SILICON |
Packaging | Bulk |
Published | 2012 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Max Operating Temperature | 175°C |
Min Operating Temperature | -40°C |