Parameters | |
---|---|
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 100 |
Height | 1.65mm |
Length | 6.7mm |
Width | 3.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -100V |
Max Power Dissipation | 3W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -5A |
Frequency | 125MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | FZT953 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 3W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 125MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 1V |
Current - Collector Cutoff (Max) | 50nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 460mV @ 500mA, 5A |
Collector Emitter Breakdown Voltage | 100V |
Transition Frequency | 125MHz |
Collector Emitter Saturation Voltage | -420mV |
Max Breakdown Voltage | 100V |
Frequency - Transition | 120MHz |
Collector Base Voltage (VCBO) | 140V |