G2SB80-E3/51
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-SIP, GBL |
| Number of Pins | 4 |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Bridge Rectifier Diodes |
| Technology | Standard |
| Pin Count | 4 |
| Number of Elements | 4 |
| Element Configuration | Single |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 50μA @ 600V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 750mA |
| Case Connection | ISOLATED |
| Forward Current | 1.5A |
| Max Reverse Leakage Current | 5μA |
| Max Surge Current | 80A |
| Number of Phases | 1 |
| Peak Reverse Current | 5μA |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Voltage - Peak Reverse (Max) | 800V |
| Height | 10.7mm |
| Length | 20.9mm |
| Width | 3.56mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
