GA35XCP12-247
| Parameters | |
|---|---|
| Test Condition | 800V, 35A, 22 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 35A |
| IGBT Type | PT |
| Gate Charge | 50nC |
| Current - Collector Pulsed (Icm) | 35A |
| Switching Energy | 2.66mJ (on), 4.35mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Input Type | Standard |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 3V |
| Reverse Recovery Time | 36 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 3V |
See Relate Datesheet
