GBJL2002-BP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | 4-SIP, GBJ |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C |
| Packaging | Tube |
| Published | 2008 |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Silver (Ag) |
| Additional Feature | UL RECOGNIZED |
| HTS Code | 8541.10.00.80 |
| Subcategory | Bridge Rectifier Diodes |
| Technology | Standard |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T4 |
| Number of Elements | 4 |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 10μA @ 200V |
| Voltage - Forward (Vf) (Max) @ If | 1.05V @ 10A |
| Output Current-Max | 20A |
| Current - Average Rectified (Io) | 20A |
| Number of Phases | 1 |
| Non-rep Pk Forward Current-Max | 240A |
| Voltage - Peak Reverse (Max) | 200V |
| Breakdown Voltage-Min | 200V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
