GBU810
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-SIP, GBU |
| Number of Pins | 4 |
| Weight | 3.404012g |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Termination | Through Hole |
| Additional Feature | UL RECOGNIZED |
| Capacitance | 130pF |
| Subcategory | Bridge Rectifier Diodes |
| Voltage - Rated DC | 1kV |
| Technology | Standard |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 8A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | GBU810 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 5μA @ 1000V |
| Output Current | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 4A |
| Case Connection | ISOLATED |
| Forward Current | 8A |
| Max Surge Current | 200A |
| Forward Voltage | 1V |
| Average Rectified Current | 8A |
| Number of Phases | 1 |
| Peak Reverse Current | 5μA |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV |
| Peak Non-Repetitive Surge Current | 200A |
| Max Forward Surge Current (Ifsm) | 200A |
| Reverse Voltage (DC) | 700V |
| Height | 18.8mm |
| Length | 22.3mm |
| Width | 3.56mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
