Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | 4-SIP, GBU |
Number of Pins | 4 |
Diode Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Additional Feature | UL RECOGNIZED |
Subcategory | Bridge Rectifier Diodes |
Technology | Standard |
Base Part Number | GBU8M |
Pin Count | 4 |
Number of Elements | 1 |
Element Configuration | Single |
Diode Type | Single Phase |
Current - Reverse Leakage @ Vr | 5μA @ 1000V |
Voltage - Forward (Vf) (Max) @ If | 1V @ 8A |
Case Connection | ISOLATED |
Forward Current | 8A |
Max Reverse Leakage Current | 5μA |
Max Surge Current | 200A |
Output Current-Max | 3.9A |
Current - Average Rectified (Io) | 3.9A |
Forward Voltage | 1V |
Average Rectified Current | 8A |
Number of Phases | 1 |
Peak Reverse Current | 5μA |
Max Repetitive Reverse Voltage (Vrrm) | 1kV |
Peak Non-Repetitive Surge Current | 200A |
Max Forward Surge Current (Ifsm) | 200A |
Height | 18.8mm |
Length | 22.3mm |
Width | 3.56mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |