GI756-E3/73
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | P600, Axial |
| Number of Pins | 600 |
| Diode Element Material | SILICON |
| Packaging | Tape & Box (TB) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Additional Feature | FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Form | WIRE |
| Base Part Number | GI756 |
| Pin Count | 2 |
| JESD-30 Code | O-PALF-W2 |
| Number of Elements | 1 |
| Voltage | 600V |
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current | 6A |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5μA @ 600V |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 6A |
| Case Connection | ISOLATED |
| Forward Current | 6A |
| Operating Temperature - Junction | -50°C~150°C |
| Max Surge Current | 400A |
| Application | GENERAL PURPOSE |
| Forward Voltage | 1.25V |
| Max Reverse Voltage (DC) | 600V |
| Average Rectified Current | 6A |
| Number of Phases | 1 |
| Reverse Recovery Time | 2.5 μs |
| Peak Reverse Current | 5μA |
| Max Repetitive Reverse Voltage (Vrrm) | 600V |
| Capacitance @ Vr, F | 150pF @ 4V 1MHz |
| Peak Non-Repetitive Surge Current | 400A |
| Reverse Voltage | 600V |
| Recovery Time | 2.5 μs |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
