GP1S25J0000F
| Parameters | |
|---|---|
| Mount | Surface Mount, Through Hole |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD |
| Number of Pins | 4 |
| Operating Temperature | -25°C~85°C |
| Packaging | Bulk |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Type | Unamplified |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Power Dissipation | 100mW |
| Forward Current | 50mA |
| Response Time | 35μs, 35μs |
| Rise Time | 100μs |
| Fall Time (Typ) | 100 μs |
| Collector Emitter Voltage (VCEO) | 35V |
| Max Collector Current | 20mA |
| Sensing Distance | 0.063 (1.6mm) |
| Collector Emitter Breakdown Voltage | 35V |
| Voltage - Collector Emitter Breakdown (Max) | 35V |
| Current - Collector (Ic) (Max) | 20mA |
| Reverse Breakdown Voltage | 6V |
| Sensing Method | Through-Beam |
| Current - DC Forward (If) (Max) | 50mA |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
