GP1S52V
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | PCB Mount |
| Operating Temperature | -25°C~85°C |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Output Configuration | Phototransistor |
| Output Current | 20mA |
| Response Time | 3μs, 4μs |
| Rise Time | 3μs |
| Forward Voltage | 1.25V |
| Max Collector Current | 20mA |
| Sensing Distance | 0.118 (3mm) |
| Collector Emitter Breakdown Voltage | 35V |
| Voltage - Collector Emitter Breakdown (Max) | 35V |
| Current - Collector (Ic) (Max) | 20mA |
| Sensing Method | Through-Beam |
| Current - DC Forward (If) (Max) | 50mA |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
