GP1S53VJ000F
| Parameters | |
|---|---|
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | Module, PC Pins, Slot Type |
| Number of Pins | 4 |
| Operating Temperature | -25°C~85°C |
| Packaging | Bulk |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Max Power Dissipation | 75mW |
| Output Voltage | 35V |
| Output Type | Phototransistor |
| Max Output Current | 20mA |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Output Configuration | Phototransistor |
| Power Dissipation | 75mW |
| Output Current | 20mA |
| Forward Current | 50mA |
| Response Time | 3μs, 4μs |
| Rise Time | 15μs |
| Forward Voltage | 1.2V |
| Fall Time (Typ) | 20 μs |
| Collector Emitter Voltage (VCEO) | 35V |
| Max Collector Current | 20mA |
| Sensing Distance | 0.197 (5mm) |
| Collector Emitter Breakdown Voltage | 35V |
| Voltage - Collector Emitter Breakdown (Max) | 35V |
| Current - Collector (Ic) (Max) | 20mA |
| Reverse Breakdown Voltage | 6V |
| Wavelength | 800 nm |
| Sensing Method | Through-Beam |
| Current - DC Forward (If) (Max) | 50mA |
| Input Current | 20mA |
| Reverse Voltage (DC) | 6V |
| Height | 10mm |
| Length | 13.7mm |
| Width | 5.2mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
