GP1S73P2J00F
| Parameters | |
|---|---|
| Operating Temperature | -25°C~85°C |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Power Dissipation | 75mW |
| Output Current | 20mA |
| Forward Current | 50mA |
| Response Time | 3μs, 4μs |
| Rise Time | 15μs |
| Forward Voltage | 1.2V |
| Fall Time (Typ) | 20 μs |
| Collector Emitter Voltage (VCEO) | 35V |
| Max Collector Current | 20mA |
| Sensing Distance | 0.197 (5mm) |
| Collector Emitter Breakdown Voltage | 35V |
| Voltage - Collector Emitter Breakdown (Max) | 35V |
| Current - Collector (Ic) (Max) | 20mA |
| Sensing Method | Through-Beam |
| Current - DC Forward (If) (Max) | 50mA |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Snap in |
| Mounting Type | Snap-In |
| Package / Case | Module, Connector |
See Relate Datesheet
