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GPA030A135MN-FDR

IGBT 1350V 60A 329W TO3PN


  • Manufacturer: SemiQ
  • Nocochips NO: 351-GPA030A135MN-FDR
  • Package: TO-3
  • Datasheet: PDF
  • Stock: 234
  • Description: IGBT 1350V 60A 329W TO3PN (Kg)

Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-3
Supplier Device Package TO-3PN
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 329W
Reverse Recovery Time 450ns
Voltage - Collector Emitter Breakdown (Max) 1350V
Current - Collector (Ic) (Max) 60A
Test Condition 600V, 30A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 300nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 30ns/145ns
Switching Energy 4.4mJ (on), 1.18mJ (off)
RoHS Status ROHS3 Compliant
See Relate Datesheet

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