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GT30J121(Q)

Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-GT30J121(Q)
  • Package: TO-3P-3, SC-65-3
  • Datasheet: -
  • Stock: 507
  • Description: Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 170W
Element Configuration Single
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 30A
Collector Emitter Breakdown Voltage 600V
Test Condition 300V, 30A, 24 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 90ns/300ns
Switching Energy 1mJ (on), 800μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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