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GT50J121(Q)

Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH)


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-GT50J121(Q)
  • Package: TO-3PL
  • Datasheet: PDF
  • Stock: 406
  • Description: Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 240W
Element Configuration Single
Input Type Standard
Power - Max 240W
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 50A
Collector Emitter Breakdown Voltage 600V
Test Condition 300V, 50A, 13 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 90ns/300ns
Switching Energy 1.3mJ (on), 1.34mJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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