HFA3102BZ
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Package / Case | SOIC |
| Number of Pins | 14 |
| Packaging | Bulk |
| Published | 2000 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 |
| Number of Terminations | 14 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Additional Feature | AGC CIRCUIT |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 8V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 30mA |
| Frequency | 10GHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 14 |
| Number of Elements | 6 |
| Polarity | NPN |
| Configuration | COMPLEX |
| Power Dissipation-Max | 250mW |
| Power Dissipation | 250mW |
| Frequency (Max) | 10GHz |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 10 GHz |
| Collector Emitter Voltage (VCEO) | 8V |
| Max Collector Current | 30mA |
| JEDEC-95 Code | MS-012AB |
| Collector Emitter Breakdown Voltage | 12V |
| Gain | 17.5 dB |
| Transition Frequency | 10000MHz |
| Max Breakdown Voltage | 12V |
| Frequency - Transition | 10GHz |
| Collector Base Voltage (VCBO) | 12V |
| Emitter Base Voltage (VEBO) | 12V |
| Continuous Collector Current | 30mA |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
