Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Package / Case | QFN EP |
Number of Pins | 16 |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 2 |
Number of Terminations | 16 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Max Operating Temperature | 125°C |
Min Operating Temperature | -55°C |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Terminal Position | QUAD |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 8GHz |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 16 |
Number of Elements | 5 |
Polarity | NPN |
Configuration | SEPARATE, 5 ELEMENTS |
Power Dissipation-Max | 150mW |
Power Dissipation | 150mW |
Frequency (Max) | 8GHz |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 8 GHz |
Collector Emitter Voltage (VCEO) | 8V |
Max Collector Current | 65mA |
JEDEC-95 Code | MO-220VEED-2 |
Collector Emitter Breakdown Voltage | 12V |
Transition Frequency | 8000MHz |
Frequency - Transition | 8GHz |
Collector Base Voltage (VCBO) | 12V |
Emitter Base Voltage (VEBO) | 5.5V |
DC Current Gain-Min (hFE) | 40 |
Continuous Collector Current | 65mA |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |