banner_page

HGT1S3N60A4DS9A

N-CHANNEL IGBT


  • Manufacturer: Rochester Electronics, LLC
  • Nocochips NO: 699-HGT1S3N60A4DS9A
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 948
  • Description: N-CHANNEL IGBT (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish NOT SPECIFIED
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 70W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 29ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 17A
Turn On Time 17.5 ns
Test Condition 390V, 3A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A
Turn Off Time-Nom (toff) 180 ns
Gate Charge 21nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 6ns/73ns
Switching Energy 37μJ (on), 25μJ (off)
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good