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HGT1S7N60A4DS

IGBT 600V 34A 125W TO263AB


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-HGT1S7N60A4DS
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 941
  • Description: IGBT 600V 34A 125W TO263AB (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 125W
Element Configuration Single
Power Dissipation 125W
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 34A
Reverse Recovery Time 22 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Test Condition 390V, 7A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Gate Charge 37nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 11ns/100ns
Switching Energy 55μJ (on), 60μJ (off)
RoHS Status RoHS Compliant
See Relate Datesheet

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