HGT1S7N60A4DS
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | MATTE TIN |
| Additional Feature | LOW CONDUCTION LOSS |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 125W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 34ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 34A |
| Turn On Time | 17 ns |
| Test Condition | 390V, 7A, 25 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A |
| Turn Off Time-Nom (toff) | 205 ns |
| Gate Charge | 37nC |
| Current - Collector Pulsed (Icm) | 56A |
| Td (on/off) @ 25°C | 11ns/100ns |
| Switching Energy | 55μJ (on), 60μJ (off) |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
