banner_page

HGTG10N120BND

HGTG10N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-HGTG10N120BND
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 221
  • Description: HGTG10N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 298W
Current Rating 35A
Number of Elements 1
Element Configuration Single
Power Dissipation 298W
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application MOTOR CONTROL
Rise Time 165ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 165 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 35A
Reverse Recovery Time 70 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.45V
Turn On Time 32 ns
Test Condition 960V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Continuous Collector Current 35A
Turn Off Time-Nom (toff) 330 ns
IGBT Type NPT
Gate Charge 100nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 850μJ (on), 800μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good