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HGTG18N120BND

HGTG18N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-HGTG18N120BND
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 167
  • Description: HGTG18N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 390W
Current Rating 54A
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 390W
Input Type Standard
Turn On Delay Time 23 μs
Transistor Application MOTOR CONTROL
Rise Time 22ns
Turn-Off Delay Time 170 μs
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 54A
Reverse Recovery Time 75 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.45V
Turn On Time 38 ns
Test Condition 960V, 18A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 18A
Turn Off Time-Nom (toff) 345 ns
IGBT Type NPT
Gate Charge 165nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 23ns/170ns
Switching Energy 1.9mJ (on), 1.8mJ (off)
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 200ns
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
See Relate Datesheet

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