HGTG20N60A4
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 290W |
| Current Rating | 70A |
| Base Part Number | HGTG20N60 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 290W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 15 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 12ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 73 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 70A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Turn On Time | 28 ns |
| Test Condition | 390V, 20A, 3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 160 ns |
| Gate Charge | 142nC |
| Current - Collector Pulsed (Icm) | 280A |
| Td (on/off) @ 25°C | 15ns/73ns |
| Switching Energy | 105μJ (on), 150μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 7V |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
