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HGTG20N60B3

HGTG20N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-HGTG20N60B3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 515
  • Description: HGTG20N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Turn On Time 45 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Turn Off Time-Nom (toff) 360 ns
Gate Charge 80nC
Current - Collector Pulsed (Icm) 160A
Switching Energy 475μJ (on), 1.05mJ (off)
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 165W
Current Rating 40A
Base Part Number HGTG20N60
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 165W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Turn-Off Delay Time 220 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
See Relate Datesheet

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