Parameters | |
---|---|
Td (on/off) @ 25°C | 24ns/195ns |
Switching Energy | 2.2mJ (on), 2.3mJ (off) |
Height | 20.82mm |
Length | 15.87mm |
Width | 4.82mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.39g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOW CONDUCTION LOSS, AVALANCHE RATED |
HTS Code | 8541.29.00.95 |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 500W |
Current Rating | 72A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 500W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 24 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 240 ns |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 72A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 2.45V |
Turn On Time | 42 ns |
Test Condition | 960V, 27A, 3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 27A |
Continuous Collector Current | 72A |
Turn Off Time-Nom (toff) | 360 ns |
IGBT Type | NPT |
Gate Charge | 270nC |
Current - Collector Pulsed (Icm) | 216A |