HGTG30N60B3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 208W |
| Current Rating | 60A |
| Base Part Number | HGTG30N60 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 208W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 60A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 56 ns |
| Test Condition | 480V, 30A, 3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Continuous Collector Current | 60A |
| Turn Off Time-Nom (toff) | 365 ns |
| Gate Charge | 170nC |
| Current - Collector Pulsed (Icm) | 220A |
| Td (on/off) @ 25°C | 36ns/137ns |
| Switching Energy | 500μJ (on), 680μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 150ns |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
