HGTG30N60B3
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Additional Feature | LOW CONDUCTION LOSS |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Power - Max | 208W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 60A |
| Turn On Time | 56 ns |
| Test Condition | 480V, 30A, 3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 365 ns |
| Gate Charge | 170nC |
| Current - Collector Pulsed (Icm) | 220A |
| Td (on/off) @ 25°C | 36ns/137ns |
| Switching Energy | 500μJ (on), 680μJ (off) |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
