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HGTP7N60A4

HGTP7N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-HGTP7N60A4
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 253
  • Description: HGTP7N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 125W
Current Rating 34A
Base Part Number HGTP7N60
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 11 ns
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 100 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 34A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 17 ns
Test Condition 390V, 7A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Turn Off Time-Nom (toff) 205 ns
Gate Charge 37nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 11ns/100ns
Switching Energy 55μJ (on), 60μJ (off)
Height 9.02mm
Length 10.28mm
Width 4.57mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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