HIP2100EIBT
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) Exposed Pad |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Voltage - Supply | 9V~14V |
| Base Part Number | HIP2100 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| Logic Voltage - VIL, VIH | 4V 7V |
| High Side Voltage - Max (Bootstrap) | 114V |
| RoHS Status | Non-RoHS Compliant |
HIP2100EIBT Overview
Gate drivers provides greater flexibilGate driversy to use the 8-SOIC (0.154, 3.90mm Width) Exposed Pad package.Tape & Reel (TR) is the packaging method.This device is equipped with 2 drivers for its configuration.There is a mounting bracket in the way of Surface Mount.WGate driversh a 9V~14V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.There is a gate type of N-Channel MOSFET in this design.For this device, the temperature range is -55°C~150°C TJ.Mosfet driver accepts input of type Non-Inverting.There are various related parts under its base part number HIP2100.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 114V.
HIP2100EIBT Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2100EIBT Applications
There are a lot of Renesas Electronics America Inc. HIP2100EIBT gate drivers applications.
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
- Video amplifiers
- Head-up and Head mounted displays
- Smart Phones
- 3-Phase Motor Inverter Driver
- Power factor correction (PFC) circuits
- Portable Navigation Devices
- High power buffers
- Isolated Gate Driver Supplies
- Portable Media Players
