HIP2101EIBZ
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) Exposed Pad |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Voltage - Supply | 9V~14V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP2101 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.056 µs |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 2.2V |
| Turn Off Time | 0.056 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1.68mm |
| Length | 4.89mm |
| Width | 3.9mm |
| RoHS Status | ROHS3 Compliant |
HIP2101EIBZ Overview
The 8-SOIC (0.154, 3.90mm Width) Exposed Pad package provides greater flexibility.Tube is the form of the package.The configuration is supported by 2 drivers.The device is mounted in the direction of Surface Mount.By using 9V~14V supply voltage, it is able to demonstrate its superiority.Gate drivers is designed wGate driversh a N-Channel MOSFET gate.This device is allowed to operate in a temperature range of -55°C~150°C TJ.This program uses the input type of Non-Inverting.The configuration starts with 8 terminations.There are numerous related parts listed under its base part number HIP2101.Mosfet driver is designed specifically to run on 12V volts of power.On the board, there are 8 component pins.There can be a voltage up to 114V on the high-side (Bootstrap).
HIP2101EIBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101EIBZ Applications
There are a lot of Renesas Electronics America Inc. HIP2101EIBZ gate drivers applications.
- Portable computers
- High-voltage isolated DC-DC converters
- DC/DC converters
- High-speed communications
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Industrial Motor Inverter - Power Tools, Robotics
- General Purpose 3-Phase Inverter
- Isolated Supplies for Motor Control
- Line drivers
- Motor Control
