HIP2101IR4Z
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 12-VFDFN Exposed Pad |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Voltage - Supply | 9V~14V |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Terminal Pitch | 0.5mm |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP2101 |
| Pin Count | 12 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.056 µs |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 2.2V |
| Turn Off Time | 0.056 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1mm |
| Length | 4mm |
| Width | 4mm |
| RoHS Status | ROHS3 Compliant |
HIP2101IR4Z Overview
For greater flexibility, its 12-VFDFN Exposed Pad package is used.Tube represents the package.Configuration is based on 2 drivers.Surface Mount is mounted in the way of the device.WGate driversh a 9V~14V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.Gate drivers is designed wGate driversh a gate type of N-Channel MOSFET.This device is allowed to operate in a temperature range of -55°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.Mosfet driver consists of 12 terminations as Mosfet drivers foundation.Mosfet driver is possible to find various related parts under Mosfet drivers base part number HIP2101.Mosfet driver is designed specifically to run on 12V volts of power.The board has 12 component pins.A boot strap voltage of 114V is the maximum possible high-side voltage.
HIP2101IR4Z Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101IR4Z Applications
There are a lot of Renesas Electronics America Inc. HIP2101IR4Z gate drivers applications.
- Active filtering
- AC-DC Inverters
- Solar power supplies
- Broadcast equipment
- High-speed communications
- UPS systems
- DC-DC Converters
- Isolated Supplies for Motor Control
- Motor Control
- Motor Drives
