Parameters |
Factory Lead Time |
1 Week |
Mounting Type |
Surface Mount |
Package / Case |
16-VQFN Exposed Pad |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tray |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Terminal Finish |
Matte Tin (Sn) - annealed |
Voltage - Supply |
9V~14V |
Base Part Number |
HIP2101 |
Pin Count |
16 |
Input Type |
Non-Inverting |
Rise / Fall Time (Typ) |
10ns 10ns |
Channel Type |
Independent |
Number of Drivers |
2 |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
2A 2A |
Logic Voltage - VIL, VIH |
0.8V 2.2V |
High Side Voltage - Max (Bootstrap) |
114V |
RoHS Status |
ROHS3 Compliant |
HIP2101IRZ Overview
A higher degree of flexibility is achieved by adopting its 16-VQFN Exposed Pad package.A package of Tray has been used.There are 2 drivers installed for this device.Its recommended mounting way is Surface Mount.When the supply voltage is 9V~14V it is able to demonstrate its superiority.A gate type of N-Channel MOSFET is used in its design.For this device, the temperature range is -55°C~150°C TJ.Non-Inverting is the input type used in this program.Mosfet driver contains a variety of related parts under Mosfet drivers base part number HIP2101.The component has 16 pins.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 114V.
HIP2101IRZ Features
Embedded in the Tray package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101IRZ Applications
There are a lot of Renesas Electronics America Inc. HIP2101IRZ gate drivers applications.
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Multicolor LED/laser displays
- Portable Media Players
- Motor controllers
- Motor Drives
- Uninterruptible Power Supplies (UPS)
- High current laser/LED systems
- High-speed communications
- General Purpose 3-Phase Inverter
- Refrigerator