HIP2101IRZT
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 16-VQFN Exposed Pad |
| Surface Mount | YES |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 16 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Voltage - Supply | 9V~14V |
| Terminal Position | QUAD |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 12V |
| Terminal Pitch | 0.8mm |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | HIP2101 |
| Pin Count | 16 |
| JESD-30 Code | S-XQCC-N16 |
| Qualification Status | Not Qualified |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.056 µs |
| Output Peak Current Limit-Nom | 2A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 2.2V |
| Turn Off Time | 0.056 µs |
| High Side Voltage - Max (Bootstrap) | 114V |
| Height Seated (Max) | 1mm |
| Length | 5mm |
| Width | 5mm |
| RoHS Status | ROHS3 Compliant |
HIP2101IRZT Overview
The 16-VQFN Exposed Pad package offers greater flexibility.There is a package in the form of Tape & Reel (TR).The configuration is supported by 2 drivers.Gate drivers is mounted in the way of Surface Mount.By using 9V~14V supply voltage, it is able to demonstrate its superiority.A gate type of N-Channel MOSFET has been used in its design.Temperature range -55°C~150°C TJ is allowed for this device.Mosfet driver uses Non-Inverting as Mosfet drivers input type.It's configured with 16 terminations.Under its base part number HIP2101, various related parts can be found.Specification is for 12V supply voltage operation.The board has 16 component pins.Max (Bootstrap) can be as high as 114V.
HIP2101IRZT Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2101IRZT Applications
There are a lot of Renesas Electronics America Inc. HIP2101IRZT gate drivers applications.
- Welding
- Isolated Gate Driver Supplies
- Portable computers
- RGB applications
- 3-Phase Motor Inverter Driver
- AC-DC Inverters
- serial peripheral interface (SPI), I2C
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Multicolor LED/laser displays
- Solar power supplies
