Parameters |
Factory Lead Time |
1 Week |
Mounting Type |
Surface Mount |
Package / Case |
8-WDFN Exposed Pad |
Operating Temperature |
-40°C~125°C TJ |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Supply |
4.5V~14V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
8 |
Input Type |
Non-Inverting |
Rise / Fall Time (Typ) |
8ns 2ns |
Channel Type |
Independent |
Number of Drivers |
2 |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
1A 1A |
Logic Voltage - VIL, VIH |
1.63V 2.06V |
High Side Voltage - Max (Bootstrap) |
60V |
RoHS Status |
ROHS3 Compliant |
HIP2103FRTAAZ Overview
Gate drivers provides greater flexibilGate driversy to use the 8-WDFN Exposed Pad package.Tube is the form of the package.Gate drivers is configured wGate driversh 2 drivers.In the direction of Surface Mount, gate drivers is mounted.Gate drivers is able to show Gate driverss superiorGate driversy on the basis of a supply voltage of 4.5V~14V.Gate type N-Channel MOSFET is designed for it.Mosfet driver is possible to use this device at temperatures as low as -40°C~125°C TJ.A type of Non-Inverting is used for input in this program.The number of component pins is 8.Max (Bootstrap) can be as high as 60V.
HIP2103FRTAAZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 60V
HIP2103FRTAAZ Applications
There are a lot of Renesas Electronics America Inc. HIP2103FRTAAZ gate drivers applications.
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Automotive Applications
- Pulse transformer drivers
- Isolated switch mode power supplies (SMPS)
- Motor controllers
- Isolated Gate Driver Supplies
- Broadcast equipment
- General Purpose 3-Phase Inverter
- Portable Media Players
- High-speed communications