HIP2120FRTBZ
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 9-WDFN Exposed Pad |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Supply | 8V~14V |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP2120 |
| Input Type | Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| Logic Voltage - VIL, VIH | 3.7V 7.93V |
| High Side Voltage - Max (Bootstrap) | 114V |
| RoHS Status | ROHS3 Compliant |
HIP2120FRTBZ Overview
Its 9-WDFN Exposed Pad package provides greater flexibility.A packaging method of Tube is indicated.This device is equipped with 2 drivers for its configuration.It's mounted on the way to Surface Mount.In the absence of a 8V~14V supply voltage, its superiority can be demonstrated.A gate type of N-Channel MOSFET is used in its design.There is a temperature range for this device of -55°C~150°C TJ.This program uses the input type of Inverting.Under its base part number HIP2120, various related parts can be found.There can be a voltage up to 114V on the high-side (Bootstrap).
HIP2120FRTBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2120FRTBZ Applications
There are a lot of Renesas Electronics America Inc. HIP2120FRTBZ gate drivers applications.
- Smart Phones
- Welding
- Motor Drives
- serial peripheral interface (SPI), I2C
- Motor Control
- High current laser/LED systems
- Power factor correction (PFC) circuits
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- DC/DC converters
- 3-Phase Motor Inverter Driver
