HIP2121FRTAZ-T
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 10-WDFN Exposed Pad |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Voltage - Supply | 8V~14V |
| Base Part Number | HIP2121 |
| Input Type | Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| Logic Voltage - VIL, VIH | 1.4V 2.2V |
| High Side Voltage - Max (Bootstrap) | 114V |
| RoHS Status | ROHS3 Compliant |
HIP2121FRTAZ-T Overview
A higher level of flexibility is provided by its 10-WDFN Exposed Pad package.Tape & Reel (TR) represents the packaging method.A total of 2 drivers are integrated into its configuration.Surface Mount is mounted in the way.Gate drivers can demonstrate Gate driverss superiorGate driversy wGate driversh a 8V~14V supply voltage.Gate type N-Channel MOSFET has been used in its design.For this device, the temperature range is -55°C~150°C TJ.The input type for this program is Inverting.You will find various related parts under the base part number HIP2121.Maximum (Bootstrap) voltage is 114V.
HIP2121FRTAZ-T Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2121FRTAZ-T Applications
There are a lot of Renesas Electronics America Inc. HIP2121FRTAZ-T gate drivers applications.
- Dual-Battery Systems
- Digitally controlled power supplies
- Refrigerator
- UPS systems
- High-voltage isolated DC-DC converters
- Topologies
- DC/DC converters
- Active Clamp Flyback or Forward and Synchronous Rectifier
- General Purpose 3-Phase Inverter
- Isolated Supplies for controller area network (CAN),
