HIP2121FRTBZ
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 9-WDFN Exposed Pad |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Supply | 8V~14V |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | HIP2121 |
| Input Type | Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| Logic Voltage - VIL, VIH | 1.4V 2.2V |
| High Side Voltage - Max (Bootstrap) | 114V |
| RoHS Status | ROHS3 Compliant |
HIP2121FRTBZ Overview
The 9-WDFN Exposed Pad package offers greater flexibility.A package of Tube has been used.2 drivers are incorporated for its configuration.Surface Mount is mounted in the way.When the supply voltage is set to 8V~14V, it can demonstrate its superiority.A gate type of N-Channel MOSFET is used in its design.This device is allowed to operate in a temperature range of -55°C~150°C TJ.Inverting is used as its input type.Numerous related parts can be found under its base part number HIP2121.Maximum (Bootstrap) voltage can be up to 114V.
HIP2121FRTBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2121FRTBZ Applications
There are a lot of Renesas Electronics America Inc. HIP2121FRTBZ gate drivers applications.
- Welding
- High frequency line drivers
- Uninterruptible Power Supplies (UPS)
- Broadcast equipment
- High current laser/LED systems
- Topologies
- Head-up and Head mounted displays
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Solar inverters
- White Goods - Air Conditioner, Washing Machine,
