Parameters |
Mounting Type |
Surface Mount |
Package / Case |
10-WDFN Exposed Pad |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Voltage - Supply |
8V~14V |
Base Part Number |
HIP2122 |
Input Type |
Inverting |
Rise / Fall Time (Typ) |
10ns 10ns |
Channel Type |
Independent |
Number of Drivers |
2 |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
2A 2A |
Logic Voltage - VIL, VIH |
3.7V 7.93V |
High Side Voltage - Max (Bootstrap) |
114V |
RoHS Status |
ROHS3 Compliant |
HIP2122FRTAZ Overview
Its 10-WDFN Exposed Pad package provides greater flexibility.A packaging method of Tube is used.Configuration is based on 2 drivers.Ideally, it should be mounted in the direction of Surface Mount.A supply voltage of 8V~14V demonstrates its superiority.The gate type on this device is N-Channel MOSFET.This device can operate at temperatures up to -55°C~150°C TJ.Mosfet driver accepts input of type Inverting.Many related parts can be found under its base part number HIP2122.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 114V.
HIP2122FRTAZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2122FRTAZ Applications
There are a lot of Renesas Electronics America Inc. HIP2122FRTAZ gate drivers applications.
- Line drivers
- UPS systems
- Active filtering
- High frequency line drivers
- High current laser/LED systems
- Solar inverters
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Isolated switch mode power supplies (SMPS)
- Isolated Supplies for Motor Control
- Video amplifiers