HIP2122FRTBZ
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 9-WDFN Exposed Pad |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Voltage - Supply | 8V~14V |
| Base Part Number | HIP2122 |
| Input Type | Inverting |
| Rise / Fall Time (Typ) | 10ns 10ns |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| Logic Voltage - VIL, VIH | 3.7V 7.93V |
| High Side Voltage - Max (Bootstrap) | 114V |
| RoHS Status | ROHS3 Compliant |
HIP2122FRTBZ Overview
A higher level of flexibility is provided by its 9-WDFN Exposed Pad package.Tube is the form of the package.The configuration is supported by 2 drivers.In this case, gate drivers is mounted along the way of Surface Mount.When the supply voltage is set to 8V~14V, it can demonstrate its superiority.Gate drivers is designed wGate driversh a gate type of N-Channel MOSFET.In this device, temperatures must not exceed -55°C~150°C TJ.This program uses the input type of Inverting.The base part number HIP2122 refers to a number of related parts.Maximum (Bootstrap) voltage can be up to 114V.
HIP2122FRTBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2122FRTBZ Applications
There are a lot of Renesas Electronics America Inc. HIP2122FRTBZ gate drivers applications.
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Active filtering
- Video amplifiers
- Telecom switch mode power supplies
- UPS systems
- Commercial and agricultural vehicles (CAV)
- Line drivers
- Isolated Supplies for Motor Control
- Topologies
- Industrial Modules
