Parameters |
Mounting Type |
Surface Mount |
Package / Case |
9-WDFN Exposed Pad |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2010 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Voltage - Supply |
8V~14V |
Base Part Number |
HIP2123 |
Input Type |
Inverting |
Rise / Fall Time (Typ) |
10ns 10ns |
Channel Type |
Independent |
Number of Drivers |
2 |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
2A 2A |
Logic Voltage - VIL, VIH |
1.4V 2.2V |
High Side Voltage - Max (Bootstrap) |
114V |
RoHS Status |
ROHS3 Compliant |
HIP2123FRTBZ Overview
Its 9-WDFN Exposed Pad package provides greater flexibility.Gate drivers is packaged in the way of Tube.Configuration is based on 2 drivers.Surface Mount is mounted in the way.In the absence of a power supply voltage of 8V~14V V, it is able to demonstrate its superiority.Gate drivers is designed wGate driversh a N-Channel MOSFET gate.-55°C~150°C TJ is the allowed temperature range for this device.Input type of Inverting is used.Numerous related parts can be found under its base part number HIP2123.Maximum (Bootstrap) voltage is 114V.
HIP2123FRTBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2123FRTBZ Applications
There are a lot of Renesas Electronics America Inc. HIP2123FRTBZ gate drivers applications.
- Solar inverters
- Line drivers
- serial peripheral interface (SPI), I2C
- RGB applications
- Multicolor LED/laser displays
- Pulse transformer drivers
- High power buffers
- Isolated Supplies for controller area network (CAN),
- Power factor correction (PFC) circuits
- AC-DC Inverters