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HIP6601BECB

Surface Mount Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 15V V 8-SOIC (0.154, 3.90mm Width) Exposed Pad HIP6601B Half-Bridge


  • Manufacturer: Renesas Electronics America Inc.
  • Nocochips NO: 668-HIP6601BECB
  • Package: 8-SOIC (0.154, 3.90mm Width) Exposed Pad
  • Datasheet: PDF
  • Stock: 290
  • Description: Surface Mount Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 15V V 8-SOIC (0.154, 3.90mm Width) Exposed Pad HIP6601B Half-Bridge (Kg)

Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width) Exposed Pad
Surface Mount YES
Operating Temperature 0°C~125°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Supply 10.8V~13.2V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 12V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number HIP6601B
JESD-30 Code R-PDSO-G8
Input Type Non-Inverting
Rise / Fall Time (Typ) 20ns 20ns
Channel Type Synchronous
Number of Drivers 2
Driven Configuration Half-Bridge
Gate Type N-Channel MOSFET
High Side Driver YES
High Side Voltage - Max (Bootstrap) 15V
Height Seated (Max) 1.68mm
Length 4.89mm
Width 3.9mm
RoHS Status Non-RoHS Compliant

HIP6601BECB Overview


In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) Exposed Pad is used.Gate drivers is packaged in the way of Tube.Gate drivers incorporates wGate driversh 2 drivers for Gate driverss configuration.There is a mounting bracket in the way of Surface Mount.Using a 10.8V~13.2V supply voltage, gate drivers is capable of demonstrating Gate driverss superiorGate driversy.This gate type has a N-Channel MOSFET design.There is a temperature range for this device of 0°C~125°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.Its configuration starts with 8 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number HIP6601B.The device is specifically designed to operate at 12V volts.Ideally, the high-side voltage should not exceed 15V.

HIP6601BECB Features


Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V

HIP6601BECB Applications


There are a lot of Renesas Electronics America Inc. HIP6601BECB gate drivers applications.

  • Portable Media Players
  • Portable Navigation Devices
  • Active filtering
  • Industrial Modules
  • Automotive Applications
  • Welding
  • Pulse transformer drivers
  • Portable computers
  • Isolated switch mode power supplies (SMPS)
  • Refrigerator

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