Parameters |
Mounting Type |
Surface Mount |
Package / Case |
16-VQFN Exposed Pad |
Operating Temperature |
0°C~125°C TJ |
Packaging |
Tube |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Voltage - Supply |
10.8V~13.2V |
Base Part Number |
HIP6602B |
Input Type |
Non-Inverting |
Rise / Fall Time (Typ) |
20ns 20ns |
Channel Type |
Synchronous |
Number of Drivers |
4 |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
High Side Voltage - Max (Bootstrap) |
15V |
RoHS Status |
Non-RoHS Compliant |
HIP6602BCR Overview
Gate drivers provides greater flexibilGate driversy to use the 16-VQFN Exposed Pad package.A package of Tube has been used.Gate drivers incorporates wGate driversh 4 drivers for Gate driverss configuration.Surface Mount is mounted in the way of the device.When the supply voltage is 10.8V~13.2V it is able to demonstrate its superiority.Gate drivers is designed wGate driversh a N-Channel MOSFET gate.There is a temperature range for this device of 0°C~125°C TJ.Mosfet driver accepts input of type Non-Inverting.You will find various related parts under the base part number HIP6602B.There can be a voltage up to 15V on the high-side (Bootstrap).
HIP6602BCR Features
Embedded in the Tube package
4 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V
HIP6602BCR Applications
There are a lot of Renesas Electronics America Inc. HIP6602BCR gate drivers applications.
- LCD/LCoS/DLP portable and embedded pico projectors
- Isolated Gate Driver Supplies
- PCMCIA applications
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Dual-Battery Systems
- Line drivers
- Industrial Modules
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- High-speed communications
- A/D drivers