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HN1A01F-Y(TE85L,F)

Trans GP BJT PNP 50V 0.15A 6-Pin US T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN1A01F-Y(TE85L,F)
  • Package: SC-74, SOT-457
  • Datasheet: -
  • Stock: 932
  • Description: Trans GP BJT PNP 50V 0.15A 6-Pin US T/R (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Frequency 80MHz
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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