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HN1B04FU-GR,LF

Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US Embossed T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN1B04FU-GR,LF
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: -
  • Stock: 117
  • Description: Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US Embossed T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 150MHz
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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