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HN1B04FU-Y,LF

Trans Gp Bjt Npn/pnp 50V 0.15A 200MW 6-PIN Us T/r


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN1B04FU-Y,LF
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: -
  • Stock: 667
  • Description: Trans Gp Bjt Npn/pnp 50V 0.15A 200MW 6-PIN Us T/r (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 150MHz
RoHS Status RoHS Compliant
See Relate Datesheet

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