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HN1C01F-GR(TE85L,F

Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN1C01F-GR(TE85L,F
  • Package: SC-74, SOT-457
  • Datasheet: -
  • Stock: 821
  • Description: Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity NPN
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 80MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Frequency - Transition 800MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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