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HN1C01FYTE85LF

TRANS 2NPN 50V 0.15A SM6


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN1C01FYTE85LF
  • Package: SC-74, SOT-457
  • Datasheet: -
  • Stock: 797
  • Description: TRANS 2NPN 50V 0.15A SM6 (Kg)

Details

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Parameters
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity NPN
Element Configuration Dual
Power - Max 300mW
Gain Bandwidth Product 80MHz
Transistor Type 2 NPN (Dual)
See Relate Datesheet

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