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HN3A51F(TE85L,F)

Trans GP BJT PNP 120V 0.1A 6-Pin SM T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-HN3A51F(TE85L,F)
  • Package: SC-74, SOT-457
  • Datasheet: PDF
  • Stock: 616
  • Description: Trans GP BJT PNP 120V 0.1A 6-Pin SM T/R (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Supplier Device Package SM6
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 300mW
Frequency 100MHz
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Power - Max 300mW
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 100mA
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 120V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) -120V
Emitter Base Voltage (VEBO) -5V
hFE Min 200
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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